应用于高能效电子产品的首要高性能硅方案供应商安森美半导体(ONSemiconductor)加入了领先纳米电子研究中心imec的多合作伙伴业界研究及开发项目,共同开发下一代硅基氮化镓(GaN-on-Si)功率器件。氮化镓具有优异电子迁移率、更高击穿电压及良好导热性的特性,使其非常适合于要求高开关能效的功率器件及射频(RF)器件。如今,基于氮化镓的功 ON Semiconductor, the premier provider of high-performance silicon solutions for energy-efficient electronics, joins iMac’s multi-partner industry research and development program at imec, a leading nanoelectronics research center, to develop the next generation of GaN- on-Si power device. Gallium nitride, which has excellent electron mobility, higher breakdown voltage and good thermal conductivity, makes it well suited for power devices and radio frequency (RF) devices that require high switching efficiency. Today, gallium nitride-based work