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重点介绍PtSi肖脱基势垒红外焦平面光腔的介质生长技术及介质的折射率和介质层厚度对PtSi肖脱基势垒探测器性能的影响,发现适当的合金条件和减薄PtSi层厚度有利于提高探测器的量子效率,背面增加抗反射层能减少红外辐射在入射界面的能量损失.
Emphatically introduces the dielectric growth technology of the PtSi Schottky barrier infrared focal plane cavity and the effect of the medium refractive index and dielectric layer thickness on the performance of the PtSi Schottky barrier detector. It is found that the proper alloy conditions and the thickness of the PtSi layer Which is helpful to improve the quantum efficiency of the detector. Adding an anti-reflection layer on the back can reduce the energy loss of the infrared radiation at the incident interface.