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基于正电子扩散方程,对于线形全吸收型等特殊的界面模型,求得了正电子湮没辐射多普勒展宽S参数与单能慢正电子入射能量E之间函数关系S(E)的解析表达式。测量不同膜厚、不同退火条件下Al/GaAs的S(E),用所得解析式拟合实验数据,发现Al/GaAs界面系统与线形全吸收型界面模型符合得很好。通过拟合,得出了界面S参数S_1及其与膜厚和退火温度的关系,由此对界面微结构及其动力学特性作了讨论。
Based on the positron diffusion equation, the analytical expression of the functional relationship S (E) between the Doppler-broadened S-parameter of positron annihilation radiation and the incident energy of the single-energy slow positron E is obtained for a special interface model such as linear total absorption . The S (E) of Al / GaAs with different film thicknesses and anneal conditions was measured. The experimental data were obtained by the analytic fitting method. It was found that the Al / GaAs interface system was in good agreement with the linear total absorption interface model. Through the fitting, the relationship between the interface S parameter S 1 and its thickness and annealing temperature is obtained, and the interface microstructure and its dynamics are discussed.