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本工作研究了掺砷二氧化硅乳胶源的制备、涂布及扩散工艺、扩散规律。把掺砷乳胶源应用到集成电路TTLSM323生产的隐埋扩散中去,得到了显著降低低电平开启电压的良好效果。实验表明,掺砷乳胶源扩散的扩散系数明显地高于气相扩散的扩散系数,扩散后的热处理对电活性砷总量有显著影响,扩散激活能随温度增高而变小。本文提出掺砷乳胶源扩散除了砷的空位扩散机构之外,还存在填隙式扩散机构,解释了实验结果。
This work studied arsenic-doped silica latex source preparation, coating and diffusion process, the diffusion law. The arsenic-doped latex source is applied to the buried diffusion of the integrated circuit TTLSM323 to obtain the good effect of significantly reducing the low-level turn-on voltage. Experiments show that the diffusion coefficient of arsenic-doped latex source diffusion is obviously higher than the diffusion coefficient of gas diffusion. The heat treatment after diffusion has a significant effect on the total amount of electroactive arsenic, and the diffusion activation energy decreases with increasing temperature. In this paper, we propose that in addition to the arsenic vacancy diffusion mechanism, the diffusion mechanism of arsenic-doped latex source exists interstitial diffusion mechanism, which explains the experimental results.