针对ZLSi7Cu2Mg合金进行微弧氧化,研究了不同阶段膜层的生长速度以及各工艺参数对膜厚的影响。采用恒流电源,实验过程中以电流、脉数、脉宽及氧化时间作为影响因素。结果表明,起初氧化膜生长速度很快,随氧化进行,生长速度逐渐下降,最后趋于平衡。在所有参数中,电流对于氧化膜最终厚度的影响最为明显。 Aiming at the micro-arc oxidation of ZLSi7Cu2Mg alloy, the growth rate of the film in different stages and the influence of various process parameters on the film thickness were studied. Using constant current power supply, the current, pulse number, pulse width and oxidation time as the influencing factors in the experiment. The results show that the initial oxide film growth rate is very fast, with the oxidation, the growth rate gradually decreased, and finally tends to balance. The effect of current on the final oxide film thickness is most pronounced in all parameters.