3.n~+在p上和p在n上的光电二极管结构的比较让我们设想一种典型的高质量n~+在p上(或p在n上)的HgCdTe光电二极管结构(见图1),这种光电二极管结构可以用现代的外延生长技术(液相外延、分子束外延或者金属有机化学汽相淀积)制备。在这种光电二极管中,p(n)型基层的合成载流子浓度约为5×10~(15){(5×10~(14))}cm~(-3),厚度约为10μm,它被夹在一层高度掺杂的n~+型(p~+或p型)区和一块CdZnTe衬底 3. Comparison of the Photodiode Structures on p and p on n Let us consider a typical high-quality HgCdTe photodiode structure with n ~ + on p (or p on n) (see Figure 1 ), This photodiode structure can be made using modern epitaxial growth techniques (liquid phase epitaxy, molecular beam epitaxy or metal-organic chemical vapor deposition). In this photodiode, the recombination carrier concentration of the p (n) -type base layer is about 5 × 10 ~ (15) {(5 × 10 ~ (14))} cm ~ (-3) and the thickness is about 10μm , Which is sandwiched between a highly doped n ~ + type (p ~ + or p type) region and a CdZnTe substrate