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用直流/射频反应磁控共溅射法分别在玻璃和单晶硅片基底上制备VOX薄膜和W掺杂VOX薄膜,经退火后,对薄膜进行电阻-温度特性、XRD、表面形貌等测试。结果表明:当溅射气压为1.5 Pa、氧氩比为0.8:25 sccm、V靶采用100 W直流电源、W靶10 W射频电源共溅射制备的W掺杂VOX薄膜,经Ar气氛中450℃退火2 h后,薄膜相变温度由未掺杂时的68℃降低到40℃左右。XRD衍射结果表明部分W原子进入了VOX晶格;另外单晶硅片上制备的VOX薄膜的电阻温度系数和电阻值均大于玻璃基片上制备的薄膜。
VOX films and W-doped VOX films were prepared on glass and monocrystalline silicon substrates respectively by DC / RF reactive magnetron sputtering. After annealing, the films were tested for resistance-temperature characteristics, XRD, surface topography . The results show that when the sputtering pressure is 1.5 Pa, oxygen-argon ratio is 0.8: 25 sccm, V-target is W-doped VOX thin film prepared by co-sputtering of 100 W DC power and W target 10 W RF power, After annealing at 2 ℃ for 2 h, the phase transition temperature of the film was reduced from 68 ℃ to 40 ℃ when not doped. The results of XRD showed that some W atoms entered into the VOX lattice. In addition, the resistance temperature coefficient and the resistance of the VOX thin films prepared on the single crystal silicon wafer were larger than that of the glass substrate.