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中国金属学会举办的第四届全国砷化镓及有关化合物学术交流会,于1981年11月25日至28日在上海召开.参加会议代表共139名.会议收到论文及工作报告共117篇. 这次会议的报告内容涉及材料和器件.在材料方面,砷化镓的纯度、完整性和深能级的研究取得可喜的结果,还开展了磷化铟材料的研制,晶体生长和多元固溶体外延也取得进展.在微波及光电器件的研究上达到了一个新水平. 会议期间,还举行了三次座谈会,分别讨论了半导体化合物的科研和今后的发展;原材料及辅助材
The 4th National Conference on GaAs and Related Compounds Held in China Institute of Metals was held in Shanghai from November 25 to November 28, 1981. A total of 139 participants attended the conference and a total of 117 papers and working reports were received. The report of this meeting covered materials and devices.Good results on the purity, integrity and deep level of gallium arsenide have been obtained in the field of materials, as well as the development of indium phosphide materials, crystal growth and multiple solid solutions Epitaxy has made progress in the microwave and optoelectronic devices to reach a new level in the meeting during the meeting held three times to discuss the research of semiconductor compounds and the future development of raw materials and auxiliary materials