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利用直流反应磁控溅射以Al、N共掺杂的方法生长p -ZnO薄膜。ZnO薄膜沉积于具有不同衬底温度的玻璃或Si衬底上 ,N来自NH3 与O2 的生长气氛 ,Al来源于AlxZn1-x(x =0 0 8% )靶材。利用XRD、XPS、Hall测试对其性能进行了分析。结果表明 ,用Al、N共掺杂的方法可以得到c轴择优取向的p型ZnO薄膜 ,载流子浓度为 (10 14 ～ 10 15)cm-3 ,电阻率为 (1 5 4～3 4 3)× 10 3 Ω·cm ,迁移率为 (1 16～ 4 6 1)cm2 /V·s。由Al、N共掺杂和仅掺N的两种情况下ZnO薄膜的N1s的XPS图谱可以推断出 ,N的掺入可能是以Al-N键的形式存在 ,而且Al的存在促进了N原子作为受主的掺入。
The p-ZnO films were grown by DC reactive magnetron sputtering with Al and N codoping. ZnO thin films were deposited on glass or Si substrates with different substrate temperatures, N from the growth atmosphere of NH3 and O2, and Al from AlxZn1-x (x = 0%) targets. Its performance was analyzed by XRD, XPS and Hall tests. The results show that the c-axis preferred orientation of p-type ZnO thin films can be obtained by co-doping Al and N with the carrier concentration of (10 14 ~ 10 15) cm -3 and the resistivity of (1 5 4 ~ 3 4 3) × 10 3 Ω · cm, and the mobility is (1 16 ~ 4 6 1) cm 2 / V · s. The XPS spectra of N1s of ZnO films from both Al and N codoping and N-only doping can infer that N incorporation may be in the form of Al-N bonds and the presence of Al promotes the formation of N atoms Incorporation as an acceptor.