用射频溅射制备了一组厚度不同的ＮｉＳｉＢ非晶态薄膜．在不同温度下，用不同时间对薄膜进行了循环退火．实验测量了循环退火后的薄膜电阻随温度的变化，得到可逆和不可逆两组曲线．厚度较大（＞１０００）的薄膜，电阻随温度的增加而增大，厚度较小（＜４００）的薄膜，电阻随温度的增加而减小．电阻温度系数有正有负．从非晶态材料的结构弛豫出发，应用激活能谱模型和推广的Ｚｉｍａｎ理论讨论了实验所得的结果． A series of amorphous NiSiB thin films were prepared by RF sputtering. The films were annealed at different temperatures for different times. The change of film resistance with temperature after cyclic annealing was measured experimentally, and two curves of reversible and irreversible were obtained. Thickness (> 1000 ) of the film, the resistance increases with increasing temperature, the smaller the thickness (<400 ) of the film, the resistance decreases with increasing temperature. The temperature coefficient of resistance has positive and negative. Starting from the structural relaxation of amorphous materials, the experimental results were discussed using the activation energy spectrum model and the extended Ziman theory.