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本文从分析Si在SiO_2上成核的一般过程出发,利用新的成核理论,分析出影响成核的重要因素是氢吸附;并着重针对ELO过程的特点,通过大量实验研究了各种条件对成核的影响,找到了既能完全抑制多晶成核又能实现侧向生长的最佳工艺条件.根据实验中测得的临界成核时间及沉积自由区宽度,采用间歇生长技术在20μm宽的SiO_2条上完全抑制了多晶成核,而加入 Br_2的生长/腐蚀循环工艺则在 30μm宽的SiO_2上完全抑制了多晶成核,为获得高质量的SOI材料打下了良好的基础.
Based on the analysis of the general process of nucleation of Si on SiO_2, the new nucleation theory is used to analyze the important factors that influence the nucleation. Hydrogen adsorption is the most important factor in the process of nucleation. In addition, Nucleation.According to the critical nucleation time and deposition free zone width measured in the experiment, using the intermittent growth technology in the 20μm wide Of polycrystalline nuclei completely inhibited the growth of polycrystalline nuclei. However, the addition of Br2 to the growth / corrosion cycle completely suppresses polycrystalline nucleation on 30μm wide SiO2, which lays a good foundation for obtaining high quality SOI materials.