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1991年6月,复旦大学应用表面物理国家重点实验室在国内率先制备出在氩离子激光照射下能发射红、橙等不同颜色可见光的多孔硅材料。经过半年多的努力,又于1992年2月首次在国内观察到多孔硅的电致发光现象,样品所加直流偏压为15伏,发光中心波长为680纳米。最近,实验室研究人员又研制出发蓝光的多孔硅样品,发光中心波长已移至500纳米;在电致发光方面也取得新的进展,如电致发光的阈值电压已降到6V。这些研究成果为用硅材料制作光电子器件的可行性提供了重要依据,可望在光电子器件研究方面开辟崭新的领域。
In June 1991, Fudan University, the State Key Laboratory of Applied Surface Physics, took the lead in China to prepare a porous silicon material capable of emitting red, orange and other visible light under argon ion laser irradiation. After more than six months of hard work, the electroluminescence of porous silicon was observed in China for the first time in February 1992. The DC bias applied to the sample was 15 V and the center wavelength of luminescence was 680 nm. More recently, lab researchers have developed blue-emitting porous silicon samples that have shifted the luminescence center wavelength to 500 nm and made new advances in electroluminescence, such as the threshold voltage of electroluminescence having dropped to 6V. These research results provide an important basis for the feasibility of making optoelectronic devices using silicon materials and are expected to open up completely new fields in optoelectronic devices research.