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氮基四元Ⅲ-Ⅴ族化合物可用于高亮度蓝光LED和高温、大功率及高频电子器件。可以通过改变AlxGayIn1-x-yN组分的大小,得到在与衬底品格匹配的情况下不同的材料禁带宽度,但是由于在给定组分下AlGaInN难以稳定生长。所以应用价力场模型(VFF)研究它的热动力稳定性,得出了AlGaInN不稳定的二相区间,并且定量讨论两种组分确定的AlGaInN合金的富In区与温度的关系。希望对生长高质量AlGaInN材料起到参考作用。
Nitrogen-based quaternary III-V compounds can be used for high-brightness blue LED and high temperature, high power and high frequency electronic devices. By varying the size of the AlxGayIn1-x-yN component, different material forbidden band widths can be obtained with a good match to the substrate, but due to the difficulty of stable growth of AlGaInN under a given composition. Therefore, the thermodynamic stability of the AlGaInN alloy was studied by using the vale field model (VFF). The instability of AlGaInN was obtained and the relationship between the In rich region and the temperature of the AlGaInN alloy was quantitatively investigated. Hope for the growth of high quality AlGaInN materials play a reference role.