普通的二极离子镀是一种真空蒸发与溅射相结合的工艺。当真空室的真空度抽到1×10~(-6)托后,充以氩气(1×10~(-2)～1×10~(-3)托),工件相对蒸发器加负高压,便形成等离子体。当被蒸发的金属原子进入等离子体中时,便被氩气的离子所撞击并电离,随之被带负高压的工件吸引而堆积成膜。这种普通的二极离子镀膜设备所形成的等离子体中,它的离子浓度只有2～5％。为提高离子浓度,我们在普通二极离子镀基础上增加了一个偏压电极板 Ordinary two-ion plating is a combination of vacuum evaporation and sputtering process. When the degree of vacuum of the vacuum chamber is pumped to 1 × 10 -6 Torr and filled with argon gas (1 × 10 -2 to 1 × 10 -3 Torr), the workpiece is negatively charged to the evaporator High pressure, they form a plasma. When the evaporated metal atoms enter the plasma, they are struck and ionized by the ions of the argon, followed by being attracted by the negatively-charged workpiece to form a film. The plasma formed by this conventional bipolar ion plating device has an ion concentration of only 2 to 5%. In order to increase the ion concentration, we have added a bias electrode plate on the basis of ordinary bipolar ion plating