提出了一种硅体微机械加工叉指电容式加速度传感器结构，对其工作原理，器件性能优化设计与制作工艺流程进行了分析，得出优化的结构参数。本结构的电容值比ＡＤＸＬ５０加速度传感器大２０倍以上，同时可避免器件与衬底材料的寄生电容。这种结构的传感器对界面电路的要求较低，更便于制出集成化处理电路。 A silicon-based micro-machined interdigital capacitive accelerometer was proposed. Its working principle, device performance optimization design and manufacturing process were analyzed, and the optimal structural parameters were obtained. The capacitance of this structure is more than 20 times larger than that of the ADXL50 accelerometer, and the parasitic capacitance of the device and the substrate material can be avoided at the same time. This structure of the sensor interface circuit less demanding, more easy to produce integrated processing circuit.