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以硝酸镍溶液为化学源,对于用不同方法沉积得到的非晶硅膜作晶化前驱物,都能予以不同程度的晶化.用VHF-PECVD方法获得的非晶硅膜作前驱物,易于去氢并更容易晶化.当化学源浓度不同时,晶化效果会存在一定差别,在一定的范围内,溶液浓度越高,晶化后形成的晶粒越大.退火气氛对晶化结果产生某些影响,可以发现,在N2气氛下退火,比在大气下有更好的晶化效果.最后对物理源与化学源作诱导金属的晶化结果进行了比较,结果表明,对诱导金属源而言,化学源显示出更为有效的晶化趋势.
Nickel nitrate solution as a chemical source for different methods of deposition of amorphous silicon film as a precursor of crystallization can be different degrees of crystallization using VHF-PECVD amorphous silicon film as a precursor, easy to To hydrogen and more easily crystallized.When chemical source concentration is different, there will be some difference in the crystallization effect, in a certain range, the higher the concentration of the solution, the larger the crystallized grains formed after crystallization.An annealing atmosphere on the crystallization results Have some effects, we can see that annealed in N2 atmosphere, better than in the atmosphere under the crystallization effect.Finally, the physical source and the chemical source for the induced crystallization of the metal were compared, the results show that the induction of metal The source of chemistry shows a more effective crystallization trend.