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由于集成电路的小型化和高集成度,使得它们对于其生产过程中的物理粒子或化学离子的污染特别敏感。某些工序,包括二氧化硅的化学腐蚀及构成电路布线的金属接触的化学腐蚀,所用腐蚀剂包含氢氟酸、硝酸、醋酸和磷酸等强腐蚀溶液。腐蚀后,片子必须在超纯去离子水中冲洗,以清除残留的腐蚀剂。本文描述的去离子水系统适用于实验室水以及处理和制造水。中等容量高纯水和较大系统之间的主要差别是水预处理的程度。
Due to the miniaturization and high integration of integrated circuits, they are particularly sensitive to the pollution of physical particles or chemical ions during their production. Certain processes include chemical attack of silicon dioxide and chemical attack of metal contacts that make up the wiring of the circuit. The etchant used contains strongly corrosive solutions such as hydrofluoric acid, nitric acid, acetic acid and phosphoric acid. After etching, the film must be rinsed in ultrapure deionized water to remove residual etchant. The deionized water system described here is suitable for laboratory water as well as for the treatment and manufacture of water. The main difference between medium capacity high purity water and larger systems is the degree of water pretreatment.