由ＳｉＧｅ合金与Ｓｉ构成的应变层异质结构、量子阱是８０年代中期发展起来的一种新型半导体材料。本文着重讨论了单片式ＳｉＧｅ红外焦平面阵列的物理基础、高质量ＳｉＧｅ材料的制备以及低温ＳｉＧｅ器件研制中的几个关键技术。 Strain layer heterostructures composed of SiGe alloy and Si, a new type of semiconductor material developed in the mid-1980s. This article focuses on the physical basis of a monolithic SiGe infrared focal plane array, the preparation of high-quality SiGe materials, and several key techniques in the development of cryogenic SiGe devices.