【摘 要】
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We demonstrate a high-operating-temperature (HOT) mid-wavelength InAs/GaSb superlattice heterojunction in-frared photodetector grown by metal-organic chemical vapor deposition.High crystalline quality and the near-zero lattice mis-match of a InAs/GaSb sup
【机 构】
：
Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,CAS,Su
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We demonstrate a high-operating-temperature (HOT) mid-wavelength InAs/GaSb superlattice heterojunction in-frared photodetector grown by metal-organic chemical vapor deposition.High crystalline quality and the near-zero lattice mis-match of a InAs/GaSb superlattice on an InAs substrate were evidenced by high-resolution X-ray diffraction.At a bias voltage of-0.1 V and an operating temperature of 200 K,the device exhibited a 50％ cutoff wavelength of ～ 4.9 μm,a dark current dens-ity of 0.012 A/cm2,and a peak specific detectivity of 2.3 × 109 cm.Hz1/2/W.
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