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最近,日本索尼公司发明了一种新的半导体器件特性稳定化技术(SIPOS技术),并已实用化。在平面工艺中,由于绝缘膜上存在电荷,所以绝缘膜和硅基板表面之间形成一种电容器,致使器件特性变坏。为克服这一缺点,人们常常在封装工艺上下功夫。索尼公司发明的SIPOS技术,用作半导体表面的保护膜,可以作出在极苛刻的条件下稳定工作的器件。SIPOS膜由于是一种含氧的半绝缘性多晶硅,所以不会产生带电现象。这种SIPOS技术,不但可以广泛用于各种类型的硅器件和批量生产的集成电路,而且与其它方式相比,既提高了器件的可靠性又降低了成本。对于比较难作的高耐压器件,可以很容易地作出10000伏级的超高耐压晶体管且封装工艺将大大简化。这种SIPOS技术的特点是:
Recently, Sony Corporation of Japan invented a new semiconductor device characteristics stabilization technology (SIPOS technology), and has been put into practical use. In the planar process, a capacitor is formed between the insulating film and the surface of the silicon substrate due to the presence of charges on the insulating film, resulting in deterioration of device characteristics. To overcome this shortcoming, people often work hard on the packaging technology. SIPOS, invented by Sony, is used as a protective film on the surface of semiconductors to make devices that work stably under extremely harsh conditions. SIPOS film is a kind of oxygen-containing semi-insulating polycrystalline silicon, so it will not produce charging phenomenon. This kind of SIPOS technology, can not only be widely used for various types of silicon devices and integrated circuits in mass production, but also compared to other ways, both to improve device reliability and reduce costs. For the more difficult to withstand high voltage devices, can easily make ultra-high voltage transformers of 10,000 volts and the packaging process will be greatly simplified. The features of this SIPOS technology are: