在原子层沉积(ALD)的腔室内,采用直流辉光放电技术,以N2等离子体作为掺杂源制备了氮掺杂石墨烯,考察了电场方向和掺杂时间对石墨烯的掺杂特性影响.喇曼光谱和高分辨率X射线光电子能谱(XPS)测试表明,随着掺杂时间的延长,氮的掺杂量逐渐提高,并且负电场较正电场具有更高的掺杂效率,在-800 V电场、N2等离子体掺杂2h的条件下,石墨烯中氮与碳的原子比达到9.5％.同时,采用Comsol Multiphysics软件模拟了腔室内正负电场情况下的等离子体分布,结果表明电极盘为负电时,腔室内的放电区域更加发散,有利于掺杂离子与自由基到石墨烯表面的扩散.“,”With N2 plasma as the doping source,the N-doped graphene was prepared in a chamber of atomic layer deposition (ALD) by the direct current glow discharge technology.The effects of the electric field direction and doping time on the doping property of graphene were investigated.The results of the Raman spectrum and high resolution X-ray photoelectron spectroscopy (XPS) indicate that the N doping amount is improved with the increase of the doping time,and the doping efficiency of the negative electric field is higher than that of the positive electric field.The atomic ratio of N and C in graphene reaches 9.5％ under the electric field with the voltage of -800 V and the nitrogen plasma doping for 2 h.Meanwhile,the plasma distribution in the chamber with the positive and negative electric fileds was simulated by the software of Comsol Multiphysics.The results show that the discharge area is more dispersive when the electrode plate is cathode,which promotes the diffusion of doping ions and excited radicals to the surface of graphene.