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快速、高可靠性的高辐射率InGaAsP双异质结发光二极管(LED)已用于1.3μm光传输系统。这些器件在InP衬底上通过液相外延制备而成。改进后的生长工艺使外延片能大面积生长(达5.4cm~2),且均匀性好,器件成品率高。耦合到NA为0.29、芯径为62.5μm光纤中的功率达12OμW。在70℃,电流密度为40κA/cm~2的条件下做加速寿命实验,预计这些器件的中期寿命超过4×10~6h,输出光功率衰减(-1dB)的失效率低于1FIT。它们用于速率140Mb/s的光通讯系统是很有希望的。
Fast, reliable high-emissivity InGaAsP double heterojunction light-emitting diodes (LEDs) have been used in 1.3 μm optical transmission systems. These devices were prepared by liquid phase epitaxy on InP substrates. The improved growth process enables the epitaxial wafer to grow in a large area (up to 5.4cm ~ 2) with good uniformity and high device yield. Coupled to an NA of 0.29, the core has a power of 12OμW in a 62.5μm optical fiber. The accelerated life test under the current density of 40 kA / cm ~ 2 at 70 ℃ is expected to exceed 4 × 10 ~ 6h in the medium term and less than 1FIT in the output optical power attenuation (-1dB). They are promising for optical communication systems at 140Mb / s.