通过大量实验,研究了一种Ta高去除速率下的高选择性阻挡层抛光液,实现对碟形坑的有效修正以及表面粗糙度的有效降低。采用磷酸作为pH调节剂,改变pH值考察Ta和Cu选择性的变化规律,进而选取Ta高去除速率下的高选择性阻挡层抛光液。通过XP-300台阶仪及原子力显微镜等测试手段,表征此抛光液对碟形坑的修正能力及对Cu表面形貌的影响,结果表明,Ta和Cu材料的去除速率随pH值增大上升明显,可以通过调节pH值有效控制Ta和Cu的去除速率,实现Ta的去除速率明显大于Cu,并且实现碟形坑的有效修正及粗糙度的明显降低。 Through a large number of experiments, a highly selective barrier polishing solution at Ta high removal rate was studied to effectively correct the dishing and reduce the surface roughness effectively. Phosphoric acid was used as pH adjuster to change the pH value to investigate the variation of Ta and Cu selectivity, and then the highly selective barrier polishing solution with Ta high removal rate was selected. The correction ability of the slurry on the crater and the effect on the surface morphology of the Cu were characterized by means of XP-300 step-meter and atomic force microscope. The results show that the removal rates of Ta and Cu materials increase with the increase of pH , The removal rate of Ta and Cu can be effectively controlled by adjusting the pH value, the removal rate of Ta is obviously larger than that of Cu, and the effective correction of the pit and the significant reduction of the roughness are realized.