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利用离子束增强沉积工艺，在硅基片上制备Si3N4／Si多层红外干涉滤波薄膜结果表明，N2+N的辅助轰击对于合成接近化学配比的Si3N4薄膜起了关键作用薄膜的折射率可达1.74～1.84实验测得的多层滤波薄膜的红外反射谱与理论值相当接近
The Si3N4 / Si multi-layer infrared interference filter film was fabricated on silicon substrate by ion beam enhanced deposition process. The results show that N2 + N assisted bombardment played a key role in the synthesis of Si3N4 thin film. The refractive index of the film is up to 1.74 ~ 1.84 The infrared reflectance spectrum of the multi-layer filter film measured by the experiment is quite close to the theoretical value