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报道了用LP MOVPE技术在蓝宝石 (α Al2 O3)衬底上生长出以双掺Zn和Si的InGaN为有源区的蓝光和绿光InGaN/AlGaN双异质结结构 ,并研制成功发射波长分别为 4 30～ 4 50nm和 52 0～ 540nm的蓝光和绿光LED。据查 ,这是国内首次有关六方GaN基绿光LED的报道
The blue and green InGaN / AlGaN double heterojunction structures with InGaN doped with Zn and Si as the active region were grown on the sapphire (α Al 2 O 3) substrate by using LP MOVPE technique. The successful emission wavelengths For 4 30 ~ 4 50nm and 52 0 ~ 540nm blue and green LED. According to the investigation, this is the first report about the hexagonal GaN-based green LED in China