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本文介绍的MESFET/SOS微波差分放大器是在蓝宝石衬底上硅外延薄膜内制备的.该电路特征线宽为1μm,制备工艺简单,仅需三块掩模,应用全离子工艺,具有足够小的漂移电压和失调电流.由于采用蓝宝石为衬底,大大减小了寄生电容,从而获得高的频率特性.在77K时对器件的测量结果表明,低温下器件的直流和微波特性均获得显著的改善.直流本征跨导增加了约46%,单位电流增益频率从4.9GHz增加到6.5GHz.作者认为这主要归因于低温下平均电子迁移率和电场漂移速度有很大的提高.
The MESFET / SOS microwave differential amplifier presented in this paper is fabricated on a silicon epitaxial thin film on a sapphire substrate with a feature line width of 1 μm and a simple fabrication process requiring only three masks, using a fully ionized process with a sufficiently small Drift voltage and offset current due to the use of sapphire substrate, greatly reducing the parasitic capacitance, resulting in high frequency characteristics of the device at 77K measured results show that the device at low temperatures DC and microwave characteristics have been significantly improved The DC intrinsic transconductance increases by about 46% and the unit current gain frequency increases from 4.9GHz to 6.5GHz.The authors believe this is mainly due to the significant increase in average electron mobility and electric field drift at low temperatures.