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采用光辅助金属有机化学汽相沉积(PA-MOCVD)法在n-SiC(6H)衬底上制备出As掺杂的p型ZnO薄膜,并制备出相应的p-ZnO∶As/n-SiC异质结器件。X射线衍射(XRD)和光致发光(PL)测试表明,ZnO薄膜具有较好的结构和光学特性。电流-电压(I-V)测试结果表明,该型异质结器件具有良好的整流特性,开启电压为5.0 V,反向击穿电压约为-13 V。正向偏压下,器件的电致发光(EL)谱表现出两个分别位于紫外和可见光区域的发光峰,通过和ZnO、SiC的PL谱对照,证实异质结器件的发光峰来源于ZnO侧的辐射复合。
As-doped p-type ZnO thin films were prepared on n-SiC (6H) substrate by photo-assisted metal-organic chemical vapor deposition (PA-MOCVD) method and the corresponding p-ZnO: As / n-SiC Heterojunction devices. X-ray diffraction (XRD) and photoluminescence (PL) tests show that ZnO thin films have good structure and optical properties. Current-voltage (I-V) test results show that this type of heterojunction device has good rectification characteristics, with a turn-on voltage of 5.0 V and a reverse breakdown voltage of about -13 V. The electroluminescence (EL) spectrum of the device shows two luminescence peaks in the UV and visible region under the forward bias. By comparing with the PL spectrum of ZnO and SiC, it is confirmed that the luminescence peak of the heterostructure device is derived from ZnO Side of the radiation complex.