基于G-V关系分析了Hg_(1-x)Cd_xTeMIS器件的少数载流子暗电流机制.对于N型Hg_(1-x)Cd_xTeMIS器件,当温度T<130K时,占优势的暗电流机制是通过禁带态的间接隧道电流;而当T>130K时则是耗尽区的产生-复合电流.在低温区,从价带到禁带态的电子热激发限制了间接隧道电流,根据R_0A对温度的依赖关系推算出禁带态位置约在价带顶上面50meV处.在P型样品中,反型层量子化效应强烈地影响少子暗电流的大小. The mechanism of minority carrier dark current in Hg_ (1-x) Cd_xTeMIS devices is analyzed based on the GV relationship.For N_type Hg_ (1-x) Cd_xTeMIS devices, the dominant dark current mechanism is at a temperature T <130K Indirect tunneling current with band state, and generation of recombination current when T> 130K. In the low temperature region, the electronic thermal excitation from valence band to forbidden band limits the indirect tunneling current. According to the relationship between R_OA and temperature Dependencies deduced that the band gap state is about 50meV above the top of the valence band.In the P-type sample, the inversion layer quantization effect strongly affects the size of the low-current dark-current.