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采用Ta_2O_5/SiO_2复合介质结构研究了ITO/复合介质/Al电容器和ZnS:Mn TFEL器件。用射频磁控溅射制备的复合介质膜,有效地解决了Ta_2O_5与ITO起反应以及Ta_2O_5薄膜的漫延性击穿问题。I—V、Q—V、B—V特性的测量结果以及加速老化实验表明,采用Ta_2O_5/SiO_2复合介质制作的TFEL器件,具有较高的稳定性和可靠性。
The ITO / composite media / Al capacitors and ZnS: Mn TFEL devices were investigated using a Ta_2O_5 / SiO_2 composite dielectric. The composite dielectric film prepared by RF magnetron sputtering effectively solves the problem of the ductile breakdown of Ta 2 O 5 with ITO and Ta 2 O 5 film. The measurement results of I-V, Q-V and B-V and the accelerated aging experiments show that the TFEL devices fabricated with Ta 2 O 5 / SiO 2 composite have higher stability and reliability.