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采用LPE-GaAs工艺成功地生长成供x波段Gunn器件所需的优质外延材料,其成品率大于80％。用此材料制成的器件成品率大于60％,并已应用在整机上。
The successful epitaxial growth of LPE-GaAs into high-quality epitaxial materials for x-band Gunn devices yields greater than 80% yield. Device made with this material device yield greater than 60%, and has been applied to the whole machine.