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指出了晶体外延生长模式现有理论描述的若干问题,包括:1弗兰克-范·德·默夫模式被描述为仅存在于衬底表面能优势度为正值的情形中,这和晶格失配度足够小的2种材料能够以该模式交替生长的实验事实不符;2对于不同的衬底表面能优势度,弗兰克-范·德·默夫模式与斯特兰斯基-克拉斯塔诺夫(S-K)模式之间的转换被描述为发生在某一固定的晶格失配度上,这显然是不合理的;3由弗兰克-范·德·默夫模式似可直接转换为沃尔默-韦伯模式,反之亦然,这一描述值得质疑.针对这些问题,提出了改进的、更加完备的理论描述,其中引入了“准弗兰克-范·德·默夫模式”的概念.在此基础上,提出了“后S-K异质兼容生长模式”的概念,并探讨了基于该模式实现高质量异质兼容体材料生长的可能性.
Several problems described in the existing theories of crystal epitaxial growth mode are pointed out, including: 1 Frank-Vander-Merf mode is described as only exists in the case where the dominance of substrate surface is positive, The fact that the two kinds of materials with the small enough scales can alternately grow in this mode does not match with each other. 2 For different substrate surface dominance, Frank-Vander-Merf mode and Stranski-Krastel The transition between the SK modes is described as occurring at a fixed lattice mismatch, which is obviously not plausible; 3 the Frank-van der Merv mode can be converted directly to Wal-Mart The description of the Moh-Weber model and vice versa is questionable, and an improved and more complete theoretical description of these problems is proposed, in which the concept of a “quasi-Frank van der Muroff model” is introduced. On this basis, the concept of “post-SK heterogeneous growth mode” is proposed and the possibility of high-quality heterogeneous compatible material growth based on this mode is discussed.