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A novel broadband power amplifier fabricated in 0.13 m SiGe HBT technology is realized.The pseudo-differential structure is proposed to avoid the influence of the bonding wire due to the AC virtual ground created at the common emitter node.A compensated matching technique is adopted in interstage matching to expand bandwidth.A multi-stage broadband matching technique is used in an input/output matching network to offer broadband impedance matching,which ensures maximum power transfer.An adaptive bias circuit could improve linearity and efficiency in wide output power level.With 2.5 V power supply,the measured results achieve 96% 3-dB bandwidth(517-1470 MHz),27.2 dB power gain,26.9 dBm maximum output power,19.7 dBm output 1 dB compression point,and 26.7% power added efficiency.
A novel broadband power fabricated in 0.13 m SiGe HBT technology is realized. The pseudo-differential structure is proposed to avoid the influence of the bonding wire due to the AC virtual ground created at the common emitter node. A compensated matching technique is adopted in interstage matching to expand bandwidth. A multi-stage broadband matching technique is used in an input / output matching network to offer broadband impedance matching, which ensures maximum power transfer. An adaptive bias circuit could improve linearity and efficiency in wide output power level. 2.5 V power supply, the measured results achieve 96% 3-dB bandwidth (517-1470 MHz), 27.2 dB power gain, 26.9 dBm maximum output power, 19.7 dBm output 1 dB compression point, and 26.7% power added efficiency.