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采用射频磁控共溅射方法制备了纳米Ge颗粒镶嵌于SiO2中的复合薄膜(Ge-SiO2),结合样品结构对光吸收特性进行深入的研究。研究发现该类样品存在较强的光吸收,并且光吸收边随Ge颗粒尺寸变小有显著的蓝移现象。采用量子限域模型和介电限域模型分别作了相应的理论计算,结果表明两种模型的理论计算结果与实验值均有一定的偏差;在小尺寸的Ge颗粒情况下,前者与实验值有明显的差异。对此结果我们给出了相应的分析讨论。
The composite film (Ge-SiO2) with nano-Ge particles embedded in SiO2 was prepared by radio-frequency magnetron co-sputtering method, and the light absorption properties were studied in detail with the sample structure. It is found that there is a strong absorption of light in these samples, and there is a significant blue shift of light absorption edge with the decrease of Ge particle size. The theoretical calculation of the quantum confinement model and the dielectric confinement model are made respectively. The results show that the theoretical calculation results of the two models have some deviations from the experimental values. In the case of small Ge particles, There are obvious differences. We give the corresponding analysis of the results of this discussion.