系统研究了硅各向异性腐蚀对偏压的依赖及重掺杂的影响,建立了液一半接触能带模型和界面电荷传递模型,提出了反应注入概念且指出腐蚀速度通常依赖于界面态的填充情况,合理解释了实验得到的蚀速-偏压关系.考虑到非平衡载流子复合后,得到与实验吻合的蚀速比-载流子浓度公式. The influence of anisotropic anisotropy of silicon on the bias voltage and the influence of heavy doping were systematically studied. The half-contact energy band model and the interfacial charge transfer model were established. The concept of reaction injection was proposed and the corrosion rate was usually dependent on the interface state , We can reasonably explain the experimentally obtained etching rate-bias relationship.After considering the non-equilibrium carrier recombination, we get the equation of the etching speed ratio-carrier concentration which accords with the experiment.