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利用直拉硅单晶中氧化物沉淀的生长，选择两步热处理制度，验证了Ｈａｍ有关扩散控制沉淀生长理论。并尝试应用Ｈａｍ理论对氧化物沉淀的形核进行处理。
Using the growth of oxide precipitates in Czochralski silicon single crystals, a two-step heat treatment system was chosen to validate Ham’s diffusion-controlled precipitation growth theory. Attempts to apply Ham’s theory to the nucleation of oxide precipitates.