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以Ga—HCl—NH_3—Ar开管气流系统,在白宝石衬底上制备了CaN外延单晶。通过反应管型式、淀积温度、反应剂气体分压及其相对比例、衬底几何位置等因素的实验选择,初步确定了获得GaN外延单晶的适宜条件。所得外延层皆为N型,其载流子(电子)浓度为～10~(19)cm~(-3)。量级,室温迁移率为50～80cm~2/V.sec,最高为89cm~2/V·SeC.以Ⅳ型GaN外延片为基底,采用金属锌和二乙基锌二种源进行了掺锌生长,均获得了i型(绝缘)GaN。用这样的掺锌外延片试制了GaN—MiN结构的二极管,初步见到了GaN(zn)的电致发光。正向偏置时为兰绿色,反向偏置时为橙黄色。
The CaN epitaxial single crystal was prepared on a white sapphire substrate by Ga-HCl-NH_3-Ar open tube gas flow system. The suitable conditions for obtaining GaN epitaxial single crystal were preliminarily determined through experimental selection of reaction tube type, deposition temperature, partial pressure of reactant gas and their relative proportions, substrate geometry and other factors. The resulting epitaxial layers are all N-type with a carrier (electron) concentration of ~10 ~ (19) cm ~ (-3). And the maximum mobility is 89cm-2 / V · SeC.The IV-type GaN epitaxial wafers are used as the substrate and doped with zinc metal and diethylzinc two sources Zinc growth, have been i-type (insulating) GaN. Using this zinc-doped epitaxial wafer prototype GaN-MiN diode structure, initially saw the GaN (zn) electroluminescence. Greenish blue when forward biased, orange yellow when reverse biased.