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采用直流等离子体化学气相沉积(dc-PECVD)技术,以甲烷为前驱体,在单晶硅表面制备了含氢类富勒烯(FL-C∶H)薄膜.简化了含氢类富勒烯(FL-C∶H)薄膜的脉冲偏压协助等离子体化学气相制备过程(mcPECVD),通过高分辨率透射电镜和拉曼光谱确定了FL-C∶H薄膜的微观结构和薄膜内的富勒烯含量;通过纳米压痕和往复摩擦试验对比了两种方法制备的FL-C∶H与传统的DLC薄膜的硬度及摩擦性能.结果表明:与用脉冲偏压协助方案制备的含氢类富勒烯薄膜相比,直流方案制备的FL-C∶H薄膜具有相似的微观结构,更优异的机械特性及摩擦学性能,同时该薄膜表现出对载荷、频率和相对湿度的低敏感性.
Hydrogen-containing fullerenes (FL-C: H) films were prepared on the surface of monocrystalline silicon by DC plasma-enhanced chemical vapor deposition (dc-PECVD) (FL-C: H) thin-film plasma assisted chemical vapor deposition process (mcPECVD) by pulsed bias voltage, the microstructure of FL-C: H thin film and Fuller within the film were determined by high resolution transmission electron microscopy and Raman spectroscopy The hardness and tribological properties of FL-C: H and conventional DLC films prepared by the two methods were compared by nano-indentation and reciprocating friction test.The results show that the hardness and tribological properties of FL-C: The FL-C: H films prepared by the direct current method have a similar microstructure, more excellent mechanical and tribological properties than the leuco films, while the films exhibit low sensitivity to loading, frequency and relative humidity.