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观测到掺铂硅中 E_c-0.23eV能级的 DLTS信号因电子辐照而衰减,而E_v+0.32eV能级则对电子辐照不敏感.这一实验结果使我们认为,掺铂硅中的两个能级不是与同一个深中心有关的.
The DLTS signal of E_c-0.23eV level in platinum-doped silicon was observed to be attenuated by electron irradiation while the E_v + 0.32eV level was not sensitive to electron irradiation. This experimental result leads us to believe that the The two levels are not related to the same deep center.