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将KrF准分子激光无铬接触式移相光刻应用于深亚微米HEMT栅图形加工，自行设计、组装了一套实验系统，很好地解决了这一器件制作的关键工艺问题。分别采用石英版移相和衬底移相方式，可重复可靠地得到剖面陡直的（0．30—0．35）μm和（0．2—0．25）μm胶阴线条，这一工艺技术完全与现有器件工艺技术兼容，为HEMT深亚微米栅加工提供了一个新的可供选择的方法，文中还从计算机模拟角度对上述两种移相光刻方式作了分析。
The KrF excimer laser chrome-free contact phase shift lithography applied to deep submicron HEMT gate pattern processing, self-designed and assembled a set of experimental system, a good solution to the key device manufacturing process issues. Respectively, using quartz phase shift and substrate phase shift mode, can be repeatedly and reliably obtained steep (0.30-0.35) μm and (0.2-0.25) μm plastic Yin Yin lines, this process The technology is completely compatible with the existing device technology and provides a new alternative method for HEMT deep sub-micron gate processing. The two phase-shifting lithography methods are also analyzed from the computer simulation point of view.