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运用三重串联电感耦合等离子质谱(ICP-MS/MS)仪直接测定高纯Eu_2O_3中超痕量的Tm,As和Si。采用H_2的原位质量法和O_2质量转移法,有效克服了基体对待测元素的干扰。通过优化仪器参数得到Tm,As和Si的背景等效浓度分别为0.0005763,0.08435,8.268μg·L~(-1)。在选定条件下,样品加标回收率为95.74%~103.82%,相对标准偏差(RSD)为0.22%~4.38%。本方法简单实用,能够满足纯度99.999%以上的高纯Eu_2O_3中杂质元素的快速测定。
Direct determination of ultra trace trace amounts of Tm, As and Si in high purity Eu_2O_3 by triplex inductively coupled plasma mass spectrometry (ICP-MS / MS). The H 2 in situ mass method and O 2 mass transfer method were used to effectively overcome the interference of the matrix to the elements to be measured. The background equivalent concentrations of Tm, As and Si were 0.0005763,0.08435,8.268μg · L -1 by optimizing the instrument parameters. Under selected conditions, the recoveries of spiked samples ranged from 95.74% to 103.82% with relative standard deviations (RSDs) of 0.22% -4.38%. The method is simple and practical, which can meet the rapid determination of impurity elements in highly pure Eu_2O_3 with a purity of over 99.999%.