用透射电镜、扫描电镜对ＧａＡｓ材料加工工艺中的表面损伤层进行了观察和检测。结果切片损伤层深度≤５０μｍ、双面研磨损伤层深度≤１５μｍ、机械化学抛光损伤层深度（腐蚀前）＜１．２μｍ。分析了损伤结构及其引入的因素。 The surface damage layer in GaAs material processing was observed and detected by TEM and SEM. Results The depth of slicing lesion was ≤50μm, the depth of double - side abrasion lesion was ≤15μm, and the depth of mechanical chemical polishing lesion (before etching) was <1.2μm. The damage structure and the factors of its introduction were analyzed.