论文部分内容阅读
用电子束蒸发MoNb的方法,制备了MoNb/SiO_2接触界面。用俄歇电子能谱(AES)测定该界面热处理前后各元素组分随深度的分布。从AES分析中发现:随着热处理温度的上升,MoNb/SiO_2界面中Mo,O渐渐出现再分布峰,形成Mo,O的富集区;Nb的富集区始终为平坦分布,并没有出现Nb的再分布峰。界面宽度由低温的1.5nm变到600℃的15nm;同时还发现600℃时界面呈现电阻性。这一异常现象是由于Mo在SiO_2界面中热稳定性差所导致的。
The MoNb / SiO 2 contact interface was prepared by electron beam evaporation of MoNb. The distributions of the elements along the depth before and after the interface heat treatment were measured by Auger electron spectroscopy (AES). From the AES analysis, it is found that with the increase of the heat treatment temperature, Mo and O in the MoNb / SiO 2 interface gradually appear redistribution peaks, forming an enrichment region of Mo and O. The enrichment region of Nb is always flat and no Nb Redistribution of the peak. The interface width changed from 1.5nm at low temperature to 15nm at 600 ℃. At the same time, the interface was also found to be resistive at 600 ℃. This anomaly is due to the poor thermal stability of Mo in the SiO 2 interface.