着重研究多孔硅在阴极偏压下过硫酸铵溶液中电压调制的电致发光现象 .随阴极偏压的增大 ,电致荧光峰位蓝移 ,荧光强度增大 ,同时发现定电压下 ,发生电致发光随时间的衰减伴随着光谱的红移现象 .通过红外光谱、AFM及电化学等手段对电致发光的电位调制机理及荧光衰减机制进行了研究 ,结果表明电致发光与光致发光具有相同的起源 ,电压选择激发不同粒径的多孔硅 ,而导致了发光峰值能量的电位选择性 .在电致发光过程中 ,强氧化剂向多孔硅注入空穴使其表面氧化导致小粒径的硅晶逐渐被剥落 ,使光谱高能部分首先衰减出现了随时间的电致发光红移现象 .这些结果支持量子限制效应在多孔硅液相电致发光中起着重要作用 Emphasis is placed on the electroluminescence of voltage modulation of porous silicon under ammonium persulfate solution under cathodic bias.With the increase of cathodic bias voltage, the peak of electrofluorescent fluorescence shifts blue-shifted and the fluorescence intensity increases, and at the same time it is found that at constant voltage, Electroluminescence decreases with time along with the red shift of the spectrum.The mechanism of electroluminescence potential modulation and fluorescence decay mechanism have been studied by means of infrared spectroscopy, AFM and electrochemical methods.The results show that electroluminescence and photoluminescence Has the same origin and the voltage is selected to excite porous silicon with different particle sizes, which leads to the potential selectivity of the luminescence peak energy. In the electroluminescence process, the strong oxidant injects holes into the porous silicon to oxidize the surface of the porous silicon to a small particle size The silicon crystal is gradually peeled off and the electroluminescence redshift over time appears first attenuation of the high energy part of the spectrum.These results support the fact that the quantum confinement effect plays an important role in the liquid phase electroluminescence of porous silicon