一、问题的提出 在生产实践中,我们发现,硅单晶衬底经高温工艺(氧化、锑扩散和外延)后,用西尔(Sirtl)腐蚀剂腐蚀,其表面往往呈现出具有星状结构的滑移线(图1)。在显微镜下观察,沿滑移线有成排的位错蚀坑(图2)。 在我们现行的工艺条件下,这种缺陷出现的几率为60％左右。用具有这种缺陷的外延片生产集成电路时,其管芯成品率较低,且所有好的管芯都集中在晶片的中央部位,在星状线 First, the issue put forward In the production practice, we found that the silicon single crystal substrate by high temperature process (oxidation, antimony diffusion and epitaxy), the corrosion of Sirtl etchant, the surface tends to have a star-shaped structure Slip line (Figure 1). Observed under a microscope with a row of dislocation pits along the slip line (Figure 2). In our current process conditions, the probability of such defects appear about 60%. When manufacturing integrated circuits using epitaxial wafers with such defects, their die yield is low and all good dies are concentrated in the center of the wafer. In the asteroid