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本文描述了在多至8个衬底上同时沉积外延层的系统。在外延层中物理和电学特性均具有高度的均匀性。片内层厚的变化低于10％,而每炉片间层厚的典型变化为±5％。GaAs_(1-x)P_x薄层的组分变化无论是在片内或是每炉片间均低于±1％。用几种技术测定的电学数据表明片内和每炉片间具有极高的掺杂均匀性。对于轻掺杂的GaAs薄层在300°K下的迁移率>6000厘米~2/伏·秒,而且>7000厘米~2/伏·秒的迁移率也经常获得。本文中叙述了载流子浓度为1×10~(15)/厘米~3至3×10~(19)/厘米~3的n型和5×10~(16)/厘米~3至5×10~(19)/厘米~3的P型的材料制备工艺。
This article describes a system for depositing epitaxial layers simultaneously on up to 8 substrates. The physical and electrical properties of the epitaxial layer are highly uniform. The change in layer thickness is less than 10% and the typical change in layer thickness per furnace is ± 5%. The change in composition of the GaAs_ (1-x) P_x thin layer is less than ± 1% either in-chip or per-plate. The electrical data measured by several techniques show very high doping uniformity between the on-chip and per-chip basis. Mobility at 300 ° K> 6000 cm-2 / volt-second for light-doped GaAs thin films and mobilities> 7000 cm-2 / volt-second are also frequently obtained. Herein, n-type and 5x10-16 / cm3 to 5x3 having a carrier concentration of 1 10-15 / cm3 to 3x10-19 / cm3 are described 10 ~ (19) / cm ~ 3 P-type material preparation process.