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本文之目的,是建立一种表示场效应三极管的工作频率和频率—输出功率乘积的本征极限及实际极限的综合理论。为此,作者分析了场效应三极管工作的三个基本阶段的物理机理,并且详细讨论了其本征参数的极限。文中引入寄生元件是为了确定它们的实际极限。最后,文章给出了所确立的公式在早期隐栅场效应晶体管结构中的应用情况,并指出今后在毫米波段内可能达到的水平。
The purpose of this paper is to establish a comprehensive theory of the intrinsic and practical limits of the operating frequency and frequency-output power of a field-effect transistor. To this end, the author analyzes the physical mechanism of the three basic stages of field-effect transistor operation, and discusses the limits of its intrinsic parameters in detail. The introduction of parasitic elements in the article is to determine their actual limits. Finally, the article gives the application of the established formula in the early-stage implicit gate field effect transistor structure and points out the possible future level in the millimeter wave band.