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采用热丝化学气相沉积法,以铁作为催化剂,在较低的衬底温度合成纳米SiC薄膜。铁粒子是在400Pa氢气的气氛中,通过用脉冲激光烧蚀铁靶5min引入的。用扫描电镜和拉曼谱对样品进行了分析。扫描电镜观察到了直径为10-30nm,长度短于1μm的无序SiC棒。拉曼谱中的横向生子模式的红移表明生长方向的限制效应。所有这些说明Fe粒子的大小将影响到SiC棒的生长。
Using hot wire chemical vapor deposition method, iron as a catalyst, the synthesis of nano-SiC film at a lower substrate temperature. The iron particles were introduced in a 400 Pa hydrogen atmosphere by ablating the iron target with a pulsed laser for 5 min. Samples were analyzed by scanning electron microscopy and Raman spectroscopy. Scanning electron microscopy observed a disordered SiC rod with a diameter of 10-30 nm and a length of less than 1 μm. The redshift of the transverse biological modes in the Raman spectrum indicates the limiting effect of the growth direction. All of these show that the size of Fe particles will affect the growth of SiC rods.