在Si衬底GaN基蓝光LED芯片上生长了一层SiON钝化膜,使器件的光输出功率提高12%且有效降低了器件在老化过程中的光衰。对有、无钝化膜的样品进行性能比较,结果表明SiON钝化膜能有效隔离环氧树脂与高温芯片,缓解环氧树脂的老化变黄;又能部分弛豫环氧树脂对芯片的张应力,降低非辐射复合中心产生的几率;有效减小器件的侧壁漏电通道,降低器件的光衰和漏电流,提高器件的可靠性。 A layer of SiON passivation film is grown on the Si substrate GaN-based blue LED chip, which improves the light output power of the device by 12% and effectively reduces the light attenuation of the device during the aging process. The performance comparison of the samples with or without passivation film showed that the SiON passivation film can effectively separate the epoxy resin from the high temperature chip and alleviate the yellowing of the aging of the epoxy resin and partially relax the epoxy resin on the chip Stress, reducing the probability of non-radiative recombination center; effectively reduce the side leakage channel of the device, reduce the device’s light failure and leakage current, improve the reliability of the device.