碳的加入为 Si- Ge系统在能带和应变工程上提供了更大的灵活性 .处于替代位置的碳可以缓解 Si Ge合金的应变 ,同时调节其能带 .报道了用 UHV/CVD生长的掺碳达 2 .2 %的锗硅碳合金 ,获得了良好的外延层质量 ,应变缓解效应明显 .使用了 X射线衍射 ( XRD) ,二次离子质谱( SIMS)与高分辨电子透射显微镜 ( HRTEM)对外延层进行检测 ;使用傅里叶红外吸收光谱( FTIR)确定碳原子处于替代位置 ,并对实验结果进行了讨论 The addition of carbon provides greater flexibility in bandgap and strain engineering for the Si-Ge system.Carbon at an alternative site can relieve the strain of SiGe alloy while regulating its energy band.However, A good epitaxial layer quality was obtained with a C2.2% Ge-Si-C alloy, and the strain relief effect was obvious. X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS) and high resolution transmission electron microscopy (HRTEM ) To detect epitaxial layers; the use of Fourier transform infrared spectroscopy (FTIR) to determine where carbon atoms are in place and the experimental results are discussed