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在台式光敏面基础上,采用SiO_2介质掩蔽,金属膜延伸电极和衬底区超声引焊电极引线,研制成InSb光伏型列阵的准平面型器件。由本工艺制备的器件具有无串音、结阻抗高、反向耐压高、稳定性好等良好性能。
On the basis of the tabletop photosensitive surface, an SiO 2 dielectric masking was used to fabricate the quasi-planar device of the InSb photovoltaic array by means of ultrasonic welding of the electrode leads of the metal film extension electrode and the substrate area. The device prepared by the process has no crosstalk, high junction resistance, high reverse voltage, good stability and good performance.